Samsung Confirms Next-Gen CXL 3.1, PCIe 6.0, and Z-NAND Roadmap at Global Memory Innovation Forum 2025

By Aayush

At the 2025 Global Memory Innovation Forum in Shenzhen, China, Samsung detailed its next-generation storage roadmap, confirming shipments of CXL 3.1 and PCIe 6.0 CMM-D products.

Kevin Yoo, CTO of Samsung’s Memory BU, shared a practical launch timeline:

  • PM1763 Gen 6 SSD – Arriving in early 2026, offering 2× the performance of its predecessor while maintaining ~25W power consumption.
  • 256 TB PCIe Gen 5 SSD – Targeted for 2026, with enterprise and AI applications in mind.
  • 512 TB PCIe Gen 6 SSD (1T EDSFF format) – Planned for 2027, doubling capacity over the Gen 5 drives.
  • Seventh-generation Z-NAND with GIDS (memory-class storage) – Scheduled for 2026, bringing ultra-low latency for specialized workloads.

Samsung first teased its PM1763 256 TB SSD in 2023, followed by a working prototype at the Future of Memory Storage 2025 event. The drive features a redesigned capacitor, controller, and DRAM layout, optimized for cooling and efficiency—critical factors in handling such extreme capacities.

High-capacity SSDs are increasingly sought after by AI labs, where training models require massive datasets. Samsung’s roadmap suggests a steady march toward scaling both capacity and performance while tackling power and thermal challenges.

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Aayush is a B.Tech graduate and the talented administrator behind AllTechNerd. . A Tech Enthusiast. Who writes mostly about Technology, Blogging and Digital Marketing.Professional skilled in Search Engine Optimization (SEO), WordPress, Google Webmaster Tools, Google Analytics
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